Rambler's Top100

Rambler's Top100

Yandex.CN    ,     .

  • 6, 2014

    1. . Mo GaN-. / / : , , . 2012. 4.

    2. BriereM. GaN-based power device platform. The arrival of a new paradigm inconversion technology [ ]. : www.powersystemdesign.com.

    3.GaN-on-Silicon wafers: the enabler of GaN power electronics / / Power Devices. 2012. 4. P.69.

    4.WürflJ., HiltO., Bahat-TreideE., ZhytnytskaR., KleinK., KotaraP., BrunnerF., KnauerA., KrügerO., WeyersM., TränkleG. Technological approaches towards high voltage, fast switching GaN power transistors / / ECS Trans. 2013. Vol.52. 1. Pp.979989. http://dx.doi.org/10.1149/05201.0979ecst.

    5.WürflJ., HiltO., Bahat-TreidelE., ZhytnytskaR., KotaraP., KrügerO., BrunnerF., WeyersM. Breakdown and dynamic effects in GaN power switching devices / / 40thInternational Symposium on Compound Semiconductors(ISCS). Kobe, Japan, 1923May2013. http://dx.doi.org/10.1002/pssc.201300244.

    6.HiltO., Bahat-TreidelE., ChoE., SingwaldS., WürflJ. Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs / / 24thInternational Symposium on Power Semiconductor Devices and ICs (ISPSD). Bruges, Belgium, 2012. Vol.14. Pp.345348. http://dx.doi.org/10.1109/ispsd.2012.6229092.

    7.MeneghessoG., ZanandreaA., StoccoA., RossettoI., DeSantiC., RampazzoF., MeneghiniM., ZanoniE., Bahat-TreidelE., HiltO., IvoP., WürflJ. GaN-HEMTs devices with single- and double-heterostructure for power switching applications / / IEEE Int. Reliab. Phys. Symp.(IRPS), Monterey, CA, USA, 2013. Pp.3C1.13C1.7. http://dx.doi.org/10.1109/irps.2013.6531983.



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